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MG400V2YS60A
MITSUBISHI IGBT Module
MG400V2YS60A
High Power Switching Applications Motor Control Applications
* * * The electrodes are isolated from case. Enhancement-mode Thermal output terminal (TH)
Equivalent Circuit
TH1 TH2 C1
G1 Fo1 E1 E1/C2
G2 Fo2 E2 E2
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MG400V2YS60A
Package Dimensions
Unit: mm
Weight: 680 g (typ.)
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MG400V2YS60A
Maximum Ratings (Ta = 25C)
Characteristic Collector-emitter voltage Gate-emitter voltage Collector current Forward current Collector power dissipation (Tc = 25C) Junction temperature Storage temperature range Isolation voltage Screw torque Terminal: M8 Mounting: M5 DC DC Symbol VCES VGES IC IF PC Tj Tstg VIsol Rating 1700 20 400 400 4300 150 -40~125 4000 (AC 1 min) 10 3 Unit V V A A W C C V N*m N*m
Electrical Characteristics (Ta = 25C)
Characteristic Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Gate-emitter voltage Gate resistance Turn-on delay time Rise time Switching time Turn-on time Turn-off delay time Fall time Turn-off time Forward voltage Reverse recovery time Thermal resistance RTC operating current Symbol IGES ICES VGE(off) VCE(sat) Cies VGE RG td(on) tr ton td(off) tf toff VF trr Rth(j-c) Irtc IF = 400A, VGE = 0V IF = 400A, VGE = -15V di/dt = 2000A/s Transistor stage Diode stage Tj = 25C Inductive load VCC = 900V IC = 400A VGE = 15V RG = 8.2 (Note) Tj = 25C Tj = 125C Test Condition VGE = 20V, VCE = 0V VCE = 1700V, VGE = 0V IC = 400mA, VCE = 5V IC = 400A VGE = 15V VCE = 10V, VGE = 0V, f = 1MHz Tj = 25C Tj = 125C Min. 4.5 13 8.2 800 Typ. 5.5 3.0 3.8 45000 15 0.35 0.2 0.55 0.9 0.4 1.3 3.2 2.4 0.20 Max. 10 1 6.5 3.4 4.2 17 15 0.6 4.2 0.40 0.029 0.056 V s C / W A s Unit A mA V V pF V
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MG400V2YS60A
Thermistor
Characteristic Zero power resistance B value Isolation voltage Symbol R25 R25 / 85 Tc = 25C Tc = 25C / Tc = 85C Tc = 25C Test Condition MIn. 2500 Typ. 100 4390 Max. Unit k K Vrms
(Note) : Switching time measurement circuit and input / output waveforms
VGE IF VCC IC VCE 0 td(off) tf toff 90% 10% 10% td(on) tr ton 0
RG -VGE IC RG
90%
10% trr
L
90%
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MG400V2YS60A
IC - VCE
800 Common emitter Tj = 25C 600 20 15 400 VGE = 8V 800 12 10 9 Common emitter Tj = 125C 600
IC - VCE
20 15 12
10
Collector current IC (A)
Collector current IC (A)
9
400
VGE = 8V
200
200
0 0
2
4
6
8
10
0 0
2
4
6
8
10
Collector-emitter voltage
VCE (V)
Collector-emitter voltage
VCE (V)
VCE - VGE VCE (V) (V)
12 12 Common emitter Tj = 25C
VCE - VGE
Common emitter Tj = 125C
VCE
10
10
Collector-emitter voltage
Collector-emitter voltage
8
8
6 800 4 400
6 400
800
4
2 0 0
2 0 0
IC = 200A 4 8 12 16 20
IC = 200A
4
8
12
16
20
Gate-emitter voltage VGE (V)
Gate-emitter voltage VGE (V)
IC - VGE
800
(A)
600
Tj = 25C
125
Collector current IC
400
200
Common emitter VCE = 5V
0 0
10
20
30
Gate-emitter voltage VGE
(V)
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MG400V2YS60A
IF - VF
Common cathode VGE = 0
VCE , VGE -QG (V)
1000 20
1000
IF (A)
800
Collector-emitter voltage VCE
800
VCE = 0
16
Forward current
600 125 Tj = 25C
600 900 400 300 200 600 Common emitter RL = 2.25 Tj = 25C
12
400
8
200
4
0 0
1
2
3
4
5
0 0
500
1000
1500
0 2000
Forward voltage VF (V)
Charge
QG
(nC)
Switching Time - RG
10000 Common emitter VCC = 900V VGE = 15V IC = 400A 10000 : Tj = 25C : Tj = 125C toff
Switching Loss - RG
Eon
Switching time (s)
Switching loss (mJ)
1000
td(off) ton
1000
Eoff
td(on) tr 100 6
tf
8
10
12
14
16
100 6
Common emitter VCC = 900V VGE = 15V IC = 400A : Tj = 25C : Tj = 125C 8 10 12 14 16
Gate resistance
RG
()
Gate resistance
RG
()
Switching Time - IC
10000 toff 1000
Switching Loss - IC
Common emitter VCC = 900V VGE = 15V RG = 8.2 : Tj = 25C : Tj = 125C Eon 100
1000 ton
tf
td(off)
td(on) 100 tr Common emitter VCC = 900V VGE = 15V RG = 8.2 100 200
Switching loss (mJ)
Switching time (s)
Eoff : Tj = 25C : Tj = 125C 300 400
10 0
10 0
100
200
300
400
Collector current IC (A)
Collector current IC (A)
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Gate-emitter voltage
VGE (V)
MG400V2YS60A
trr, Irr - IF
1000 100
Edsw - IF Edsw (mJ)
Peak reverse recovery current Irr (A) Reverse recovery time trr (ns)
trr 100 Irr Common cathode di / dt = 2000A / s VGE = -10V VCC = 900V : Tj = 25C : Tj = 125C 10 0 100 200 300 400
Reverse recovery loss
10 Common cathode di / dt = 2000A / s VGE = -10V VCC = 900V : Tj = 25C : Tj = 125C 1 0 100 200 300 400
Forward crrent
IF (A)
Forward crrent
IF (A)
C - VCE
100000 1 Tc = 25C Cies
Rth(j-c) - tw
(pF)
30000
Transient thermal resistance Rth(j-c) (C / W)
0.1 Diode stage
Capacitance C
10000
3000 Common emiter 1000 VGE = 0 F = 1MHz 300 0.1 Tj = 25C 0.3 1 3 10 30
Coes
0.01 Transistor stage
Cres
0.001 0.0005 0.001 0.01 0.1 1 10
100
Collector-emitter voltage VCE (V)
Pulse width
tw (s)
Short Circuit Soa
10000 16
Short Circuit tw - RG
Collector current IC (A)
1000
Pulse width tw (s)
12
8
100
VCC = 900V RG = 8.2 VGE = 15V tw 10s Tj 125C 400 800 1200 1600 2000
4
VCC = 1200V VGE =15V Tj = 125C
10 0
0 0
4
8
12
16
Collector-emitter voltage VCE (V)
Gate resistance
RG
()
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MG400V2YS60A
Reverse Bias Soa
1000
Collector current IC (A)
100
Tj 125C VGE = 15V RG = 8.2 400 800 1200 1600 2000
10 0
Collector-emitter voltage
VCE (V)
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MG400V2YS60A

VCE(sat)
Rank Symbol 29 30 31 32 33 34 Min. 2.6 2.7 2.8 2.9 3.0 3.1 Max. 2.9 3.0 3.1 3.2 3.3 3.4

VF
Rank Symbol G H I J K L M N Min 2.5 2.7 2.9 3.1 3.3 3.5 3.7 3.9 Max. 2.8 3.0 3.2 3.4 3.6 3.8 4.0 4.2

MITSUBISHI MG400V2YS60A
29H30H
123456
Low side High side
2004-10-01
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